库存数量：
产品介绍：提供耿氏二极管覆盖140GHz应用，gunn diodes，waveguide gunn oscillator
The MwT-GK Gunn Diode is targeted at CW and pulsed K-band (18-26.5 GHz) frequency source applications. Typical Applications for this device include Motion Detection and Surveillance, Microwave Transmitter and Receiver, Military Radar, Gunn Diode Oscillators and Radar Detectors.
| Part Number | Freq (GHz) | P-1dB (dBm) | Package Options |
|---|---|---|---|
| MwT-GK-C | 18-26.5 | 13.0 | Chip |
| MwT-GK-P | 18-26.5 | 13.0 | Pill pack |
| MwT-GX-C | 8-14 | 15.0 | Chip |
| MwT-GX-P | 8-14 | 15.0 | Pill pack |
主要特性:
高稳定性可靠性
窄带/宽带BW可调
机械调谐或者电压变容调谐
高功率毫米波信号输出
集成散热片
可选为调谐螺杆
These Gunn oscillators use high Q resonator circuits to produce clean and stable output signals. Either GaAs or InP Gunn diodes are used depending on the output power and frequency requirements. InP Gunn diodes are generally used in the high frequency high power oscillators. They offer lower AM noise along with higher efficiency. The bias input contains an integral low frequency suppression filter and over voltage protection circuit. These oscillators can be used as a laboratory source, a multiplier driver, local oscillator or whenever a reliable source for the generation of millimeter-wave signals is required.
The varactor tuning voltage is from the Gunn bias voltage to -20 volts (ex. +10v to -20v), or from Gunn bias voltage to +30v (ex. +5v to +30v).
When a temperature controller is used, the output power is reduced by approximately 1.5dB.
The threshold current is approximately 1.3 times the operating current. InP Gunn diodes do not exhibit a threshold current.
Storage temperature is -55oC to +125oC. The operating temperature for GaAs Gunn diodes is -55oC to +71oC. The operating temperature for InP Gunn diodes is -55oC to +60oC.
